MTB75N06HD

The D2PAK package, housing the high-density HDTMOS power FET, is suitable for applications that require the use of surface mount components with higher power and lower R DS(on) capabilities. These devices are particularly well suited for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, especially in bridge circuits where diode speed and commutation safe operating areas are critical. They also offer additional safety margin against unexpected voltage transients.

The Motorola TMOS Power MOSFET Transistor has the following key features mentioned in the text: 1. Drain–Source Breakdown Voltage: V(BR)DSS ranges from 60 to 68 Vdc . 2. Zero Gate Voltage Drain Current: IDSS is 10 µAdc at 25°C and 100 µAdc at 125°C . 3. Gate–Body Leakage Current: IGSS ranges from 5.0 to 100 nAdc . 4. Gate Threshold Voltage: VGS(th) ranges from 2.0 to 3.0 Vdc . 5. Static Drain–Source On–Resistance: RDS(on) is between 8.3 and 10 mΩ . 6. Drain–Source On–Voltage: VDS(on) is between 0.7 and 0.9 Vdc . 7. Package Dimensions: The transistor is in a CASE 418B–02 package with specific pin configurations for GATE, DRAIN, and SOURCE . 8. Power MOSFET Switching: The transistor is charge controlled, and switching behavior is determined by the FET input capacitance and gate charge data . Motorola TMOS Power MOSFET Transistor offers these features as mentioned in the text. .

The maximum Drain-to-Source Voltage (VDSS) specified for the Motorola TMOS Power MOSFET Transistor is 60.4 Vdc. .