MRFE6VP5150NR1

The load mismatch/ruggedness result for a signal type of CW at a frequency of 98 MHz is VSWR > 65:1 at all Phase Angles, with a Pin of 3.0W (3 dB Overdrive) and no device degradation.

The RF Power LDMOS Transistors described in the document have the following features: 1. Designed for high ruggedness applications in industrial, broadcast, aerospace, and radio/land mobile applications . 2. Unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz . 3. Can operate at various frequencies with different signal types such as CW and pulse . 4. Demonstrated load mismatch/ruggedness capabilities with high VSWR and no device degradation . 5. Typical characteristics show output power versus gate-source voltage and input power, as well as power gain and drain efficiency versus output power and quiescent current . RF Power LDMOS Transistors offer ruggedness, wide frequency range utilization, and high performance characteristics as described in the document.