IRFHM3911TRPBF

The IRFHM3911TRPbF HEXFET® Power MOSFET has several features and benefits mentioned in the document. 1. The gate-to-source voltage is ±20V . 2. It has a continuous drain current of 3.2A at 25°C with VGS at 10V . 3. The continuous drain current is 11A at 25°C with VGS at 10V at the bottom of the case . 4. At 100°C, the continuous drain current is 6.6A with VGS at 10V at the bottom of the case . 5. The pulsed drain current is 36A . 6. The power dissipation is 2.8W at 25°C . 7. The power dissipation at the bottom of the case is 29W at 25°C . 8. The maximum operating junction temperature is -55 to +150°C . 9. The drain-to-source voltage is 100V . 10. The maximum drain-to-source on-resistance is 115mΩ at VGS = 10V . 11. The typical gate charge is 17nC . 12. The device is suitable for applications such as POE+ Power Sourcing Equipment Switch . IRFHM3911TRPbF HEXFET® Power MOSFET.

The Continuous Drain Current at 25°C for the IRFHM3911TRPbF HEXFET® Power MOSFET with VGS at 10V is 3.2A .

The maximum Gate-to-Source Voltage for the IRFHM3911TRPbF HEXFET® Power MOSFET is ±20V .