ALD310708APCL

The Gate Threshold Voltage (VGS(th)) of the ALD310708A/ALD310708 MOSFET arrays is set precisely at -0.80V +/-0.02V, with a typical offset voltage of only +/-0.001V (1mV) .

The ALD310708A/ALD310708 MOSFET arrays are mentioned to be used in the following applications: 1. 0.5% low voltage precision current mirrors . 2. 0.5% precision low voltage cascode current sources . 3. 0.5% precision low tempco cascode current sources . ALD310708A/ALD310708, Vers. 1.5 Advanced Linear Devices, Inc. .

The ALD310708A/ALD310708 high precision monolithic quad P-Channel MOSFET arrays have several features and benefits mentioned in the document. These include: 1. Precision -0.80V Gate Threshold Voltage for low voltage and low power small signal applications, enabling circuit designs with very low operating voltages such as 2V power supplies . 2. High input impedance (2.5 x 10^10Ω) and high DC current gain (>10^8) . 3. Exceptional matching of device electrical characteristics with Gate Threshold Voltage VGS(th) set precisely at -0.80V +/-0.02V, featuring a typical offset voltage of only +/-0.001V (1mV) . 4. Designed for minimum offset voltage and differential thermal response, suitable for switching and amplifying applications in -0.80V to -8.0V powered systems where low input bias current, low input capacitance, and fast switching speed are desired . 5. Operating features enabled by the precision of the Gate Threshold Voltage include exponential variation of operating current level with gate bias voltage at or below the Gate Threshold Voltage (subthreshold region) and operation with nA of bias current and nW of power dissipation . 6. Typical applications include 0.5% low voltage precision current mirrors, 0.5% precision low voltage cascode current sources, and 0.5% precision low tempco cascode current sources . ALD310708A/ALD310708 MOSFET arrays offer precise characteristics and benefits suitable for various low voltage and low power applications. .